# Category: ONLINE MCQ EE AND ECE

## ONLINE MCQ EE AND ECE-CONTROL SYSTEMS 4

1. __ can be used for converting the angular position of a shaft into electrical signal: a) LVDT b) Synchros c) DC Servo motor d) AC Servo motor Ans: …

## ONLINE MCQ EE AND ECE-CONTROL SYSTEMS 3

1. A transfer function of a system is a Laplace transform of its: a) Square wave response b) Step response c) Ramp response d) Impulse response Ans: D Answer …

## ONLINE MCQ EE AND ECE-CONTROL SYSTEMS 2

1. An impulse function is a derivative of  __ function a) Parabolic b) Step c) Ramp d) Linear Ans: B Answer   2. The required for the response to …

## ONLINE MCQ EE AND ECE-Control Systems 1

1. The frequency and time domain are related through: a) Laplace transform b) Fourier transform c) Laplace transform and fourier integral d) None of the above Ans: C Answer …

## ONLINE MCQ EE AND ECE-Electronics Devices & Circuits Part 9

Which of the following amplifier is used in a digital to analog converter? (a) Non inverter (b) Voltage follower (c) Summer (d) Difference amplifier Ans: C Answer Differential amplifiers …

## ONLINE MCQ EE AND ECE-Electronics Devices & Circuits Part 8

An ideal OP-AMP is an ideal A. Current controlled Current source B. Current controlled Voltage source C. Voltage controlled Voltage source D. Voltage controlled Current source Ans: C Answer …

## ONLINE MCQ EE AND ECE-POWER ELECTRONICS PART 13

The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (a) Avalanche breakdown (b) Zener breakdown (c) Breakdown by tunneling (d) High voltage breakdown Ans: …

## ONLINE MCQ EE AND ECE-POWER ELECTRONICS PART 12

which of the following statements are true about VI characteristic of SCR? A. Holding current is more than Latching current B. SCR will trigger if the applied voltage exceeds …

## ONLINE MCQ EE AND ECE-POWER ELECTRONICS PART 11

Which of the following statements are correct? 1. Thyristor is current driven device 2. GTO is current driven device 3. GTR is current driven device 4. SCR is a …

## ONLINE MCQ EE AND ECE-POWER ELECTRONICS PART 10

Thermal runaway is not possible in FET because as the temperature of FET increases A. The mobility decreases B. The transconductance increases C. The drain current increases D. None …