SSC JE Electrical Important MCQ Part 26

SSC JE Electrical Important MCQ PDF Part 26

1.Find voltage vin the circuit shown in Fig.

A.4 V

B.24 V

C.28 V

D.6 V

Answer : B

2.The current through an element is shown in Fig. What is the total charge that passed through the element at t=3 s

A.10 C


C.30 C

D.120 mC

Answer : B

3.The charge entering a certain element is shown in Fig.The value of current at t = 6 ms is

A.30 A

B.0 A

C.-15 A

D.15 A

Answer : B

Details Solution Available In Electrical One Year Test Series Pass

4.A lightning bolt with 10 kA strikes an object for 15 s. How much charge is deposited on the object

A.120 mC

B.120 C

C.12 mC

D.12 C

Answer : A

5.Figure shows a circuit with five elements. If P1=-205 W, P2=60 W, P4=45 W, P5= 30 W,What is the power received or delivered by element 3

A.70 W

B.-70 W

C.30 W

D.-30 W

Answer : B

6.A network with b branches, n nodes, and l independent loops will satisfy the which of following fundamental theorem of network topology

A.b = l + n – 1

B.b = l + n + 1

C.b = l – n – 1

D.b =- l + n + 1

Answer : A

7.Which of following equation will be satisfy KVL of circuit given in figure

A.v2 + v3 + v5 = v1 + v4

B.v2 + v3 + v5 = v1 – v4

C.v2 + v3 – v5 = v1 + v4

D.v2 – v3 – v5 = v1 + v4

Answer : A

8.Find Req for the circuit shown in Fig

A.14.4 Ω

B.2.4 Ω

C.10.4 Ω

D.12.4 Ω

Answer : A

Details Solution Available In Electrical One Year Test Series Pass

9.In the circuit of Fig. If R3 decrease then

(a) current through R3 decrease
(b) voltage across R3 decrease
(c) voltage across R1 decrease
(d) power dissipated in R2 decrease

Which is true





Answer : B

10.A network has 12 branches and 8 independent loops. How many nodes are there in the network





Answer : C

11.Value of current i in Fig. when the switch is in position 1.

A.25 mA

B.4 mA

C.40 mA

D.0 mA

Answer : C

12.For large values of ∣VDS∣, a FET behaves as a

A.voltage-controlled resistor

B.current-controlled current source

C.voltage-controlled current source

D.current-controlled resistor

Answer : C

13.In MOSFET devices, the N-channel type is better than the P-channel type in the following respect

A.It has better noise immunity

B.It is faster

C.It is TTL compatible

D.It has better drive capability

Answer : B

14.In a MOSFET, the polarity of the inversion layer is the same as that of the

A.majority carriers in the drain

B.minority carries in the drain

C.majority carries in the substrate

D.majority carries in the source

Answer : D

Details Solution Available In Electrical One Year Test Series Pass

15.A BJT is said to be operating in the saturation region if

A.both the junctions are reverse biased

B.base—emitter junction is reverse biased and base collector junction is forward biase

C.base—emitter junction is forward biased and base—collector junction reverse biased

D.both the junctions are forward biased

Answer : D

16.The early-effect in a BJT is caused by turn-on turn-off

C.large collector—base reverse bias

D.large emitter—base forward bias

Answer : C

17.According to Hall effect, the Hall voltage is proportional to—–(B is the magnetic field and I is the current.)

A.the product of B and I

B.inverse of the product of B and I

C.I only

D.B only

Answer : A

18.The unit of q/kT is





Answer : B

19.Drift current in semiconductors depends upon

A.only the electric field

B.only the carrier concentration gradient

C.both the electric field and the carrier concentration

D.both the electric field and the carrier concentration gradient

Answer : C

20.The diffusion potential across a P—N junction

A.decreases with increasing doping concentration

B.increases with decreasing band gap

C.does not depend on doping concentrations

D.increases with increase in doping concentration

Answer : D

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