**1.
Transistor biasing represents ……………. conditions**

- a.c.
- d.c.
- both

a.c. and d.c. - none of

the above

**Ans
: 2**

**2.
Transistor biasing is done to keep ………… in the circuit**

1.Proper

direct current

2.Proper alternating current

3.The base current small

4.Collector current small

**Ans : 1**

**3.
Operating point represents …………..**

1.Values of

IC and VCE when signal is applied

2.The magnitude of signal

3.Zero signal values of IC and VCE

4.None of the above

**Ans : 3**

**4.
If biasing is not done in an amplifier circuit, it results in ……………**

1.Decrease

in the base current

2.Unfaithful amplification

3.Excessive collector bias

4.None of the above

**Ans : 2**

**5.
Transistor biasing is generally provided by a …………….**

1.Biasing

circuit

2.Bias battery

3.Diode

4.None of the above

**Ans : 1**

**6.
For faithful amplification by a transistor circuit, the value of VBE should
………. for a silicon transistor**

1.Be zero

2.Be 0.01 V

3.Not fall below 0.7 V

4.Be between 0 V and 0.1 V

**Ans : 3**

**7.
For proper operation of the transistor, its collector should have …………**

1.Proper

forward bias

2.Proper reverse bias

3.Very small size

4.None of the above

**Ans : 2**

**8.
For faithful amplification by a transistor circuit, the value of VCE should
……….. for silicon transistor**

1.Not fall

below 1 V

2.Be zero

3.Be 0.2 V

4.None of the above

**Ans : 1**

**9.
The circuit that provides the best stabilization of operating point is …………**

1.Base

resistor bias

2.Collector feedback bias

3.Potential divider bias

4.None of the above

**Ans : 3**

**10.
The point of intersection of d.c. and a.c. load lines represents …………..**

1.Operating

point

2.Current gain

3.Voltage gain

4.None of the above

**Ans : 1**

**11.
An ideal value of stability factor is …………..**

1.100

2.200

3.More than 200

4.1

**Ans : 4**

**12.
The zero signal IC is generally ……………… mA in the initial stages of a transistor
amplifier**

1.4

2.1

3.3

4.More than 10

**Ans : 2**

**13.
If the maximum collector current due to signal alone is 3 mA, then zero signal
collector current should be at least equal to ………..**

1.6 mA

2.mA

3.3 mA

4.1 mA

**Ans : 3**

**14.
The disadvantage of base resistor method of transistor biasing is that it …………**

1.Is

complicated

2.Is sensitive to changes in ß

3.Provides high stability

4.None of the above

**Ans : 2**

**15.
The biasing circuit has a stability factor of 50. If due to temperature change,
ICBO changes by 1 µA, then IC will change by …………**

1.100 µA

2.25 µA

3.20 µA

4.50 µA

**Ans : 4**

**16.
For good stabilsation in voltage divider bias, the current I1 flowing through
R1 and R2 should be equal to or greater than**

1.10 IB

2.3 IB

3.2 IB

4.4 IB

**Ans : 1**

**17.
The leakage current in a silicon transistor is about ………… the leakage current
in a germanium transistor**

1.One

hundredth

2.One tenth

3.One thousandth

4.One millionth

**Ans : 3**

**18.
The operating point is also called the ………….**

1.Cut off

point

2.Quiescent point

3.Saturation point

4.None of the above

**Ans : 2**

**19.
For proper amplification by a transistor circuit, the operating point should be
located at the ………….. of the d.c. load line**

1.The end

point

2.Middle

3.The maximum current point

4.None of the above

**Ans : 2**

**20.
The operating point ………………… on the a.c. load line**

1.Also line

2.Does not lie

3.May or may not lie

4.Data insufficient

**Ans : 1**

**21.
The disadvantage of voltage divider bias is that it has ………….**

1.High

stability factor

2.Low base current

3.Many resistors

4.None of the above

**Ans : 3**

**22.
Thermal runaway occurs when ……….**

1.Collector

is reverse biased

2.Transistor is not biased

3.Emitter is forward biased

4.Junction capacitance is high

**Ans : 2**

**23.
The purpose of resistance in the emitter circuit of a transistor amplifier is
to ………….**

1.Limit the

maximum emitter current

2.Provide base-emitter bias

3.Limit the change in emitter current

4.None of the above

**Ans : 3**

**24.
In a transistor amplifier circuit VCE = VCB + ……………..**

1.VBE

2.2VBE

3.5 VBE

4.None of the above

**Ans : 1**

**25.
The base resistor method is generally used in ………**

1.Amplifier

circuits

2.Switching circuits

3.Rectifier circuits

4.None of the above

**Ans : 2**

**26.
For germanium transistor amplifier, VCE should ………….. for faithful
amplification**

1.Be zero

2.Be 0.2 V

3.Not fall below 0.7 V

4.None of the above

**Ans : 3**

**27.
In a base resistor method, if the value of ß changes by 50, then collector
current will change by a factor ………**

1.25

2.50

3.100

4.200

**Ans : 2**

**28.
The stability factor of a collector feedback bias circuit is ……….. that of base
resistor bias.**

1.The same

as

2.More than

3.Less than

4.None of the above

**Ans : 3**

**29.
In the design of a biasing circuit, the value of collector load RC is determined
by …………**

1.VCE

consideration

2.VBE consideration

3.IB consideration

4.None of the above

**Ans : 1**

**30.
If the value of collector current IC increases, then the value of VCE …………**

1.Remains

the same

2.Decreases

3.Increases

4.None of the above

**Ans : 2**

**31.
If the temperature increases, the value of VCE …………**

1.Remains

the same

2.Is increased

3.Is decreased

4.None of the above

**Ans : 3**

**32.
The stabilisation of operating point in potential divider method is provided by
……….**

1.RE

consideration

2.RC consideration

3.VCC consideration

4.None of the above

**Answer: 1**

**33.
The value of VBE …………….**

1.Depends

upon IC to moderate extent

2.Is almost independent of IC

3.Is strongly dependant on IC

4.None of the above

**Ans : 2**

**34.
When the temperature changes, the operating point is shifted due to …….**

1.Change in

ICBO

2.Change in VCC

3.Change in the values of circuit resistance

4.None of the above

**Ans : 1**

**35.
The value of stability factor for a base resistor bias is …………**

1.RB (ß+1)

2.(ß+1)RC

3.(ß+1)

4.1-ß

**Ans : 3**

**36.
In a particular biasing circuit, the value of RE is about ………**

1.10 kO

2.1 MO

3.100 kO

4.800 O

**Ans : 4**

**37.
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V,
zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the
base resistor RB?**

1.105 kO

2.530 kO

3.315 kO

4.None of the above

**Ans : 2**

**38.
In voltage divider bias, VCC = 25 V; R1 = 10 kO; R2 = 2.2 V ; RC = 3.6 V and RE
=1 kO. What is the emitter voltage?**

1.7 V

2.3 V

3.V

4.8 V

**Ans : 4**

**39.
In the above question (Q38.) , what is the collector voltage?**

1.3 V

2.8 V

3.6 V

4.7 V

**Ans : 1**

**40.
In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2
kO, what is the value of RE ?**

1.2000 O

2.1400 O

3.800 O

4.1600 O

**Ans :3**

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